|Wed 13:10 – 13:30||Bernice Zee||Challenges of Advanced Packaging Failure Analysis|
Moore’s Law is progressively slowing as barriers to traditional monolithic scaling become increasing prohibitive to keep up with. In addition, the advent of machines learning (ML), artificial intelligence (AI) and the internet of things (IOT) are driving the need for higher performance/bandwidth, smaller form factors and lower power solutions for electronics. This has fueled the development of new semiconductor packages such as Embedded Multi-Die Interconnect Bridge (EMIB), Wafer Fan-Out and 2.5D packages. However, failure analysis (FA) of these new packages poses challenges to the traditional way of package level failure analysis. This talk aims to highlight some of the challenges faced as well as potential workarounds demonstrated by case studies applications.
|Wed 13.30 – 13:50||Sebastian Brand||Arbitrary waveform stimulation and TRTR analysis for advanced 3D LIT inspection|
|Wed 13:50 – 14:10||Boris Rottwinkel||Laser processing of semiconductor materials for failure analysis|
The development of new high-density integrated electronic devices requires advanced failure analysis solutions. Infrared-microscopy allow the detection of failure induced heat sources by observing the chips from the back-side during operation.
To reach the therefore required transparency in the infrared wavelength region the sample must be thinned down. Different laser sources in the ps- and fs-pulse duration range were used to ensure the required gentle processing without creating defects in the remaining semiconductor material. The lecture shows the dependency of the removal rate on the laser parameters and the optimizations to achieve a minimum surface roughness of the remaining silicon.
|Wed 14:10 – 14:30||Glenn Ross||Voids in CuSn 3D/Wafer Bonding|
The electronics industry is undergoing a fundamental shift in integration technologies, from large volume low-density interconnections to low volume high-density interconnections, such as through-silicon vias and micro-connects. The shift makes possible greater levels of integration and improved performance with heterogeneous 3D-integration. This presents new challenges to our understanding of the microstructural evolution of small volume interconnects and their associated reliability challenges. An identified reliability challenge of significant importance is intermetallic void formation (Kirkendall voids). This presentation focuses on: (i) under what conditions do voids form, (ii) the characteristic microstructural and chemical behaviour of a voided interface, (iii) an alternative model for void formation and (iv) is it possible to have a void free microelectronics industry?
|Wed 14:30 – 14:50
||Uwe Krieger||Micro-transfer-printing – heterogeneous integration and characterization of failure modes|
X-FAB and its partners develop a new micro-assembly technology – micro-transfer-printing (μTP). It has been applied by X-Celeprint for applications ranging from OLED and micro-LEDs photonics already. The technological principle is based on parallel transfer of an array of devices from a source to a non-native target substrate applying an elastomeric stamp. The knowledge of typical failure modes is a key element in ensuring stable production and develop strategies to prevent failures in the manufacturing process. X-FAB will present details of typical applications for heterogeneous integration by μTP and give a brief outlook for failure modes and material characterization. In a second subsequent presentation FhG-IMWS will present related mechanical- and numerical approaches for the µTP process design.
|Wed 14:50 – 15:10
||Low temperature Microwave Indusced Plasma Etching for package decapsulation
Decapsulation of integrated circuits for failure analysis is a very sensitive preparation step as it must preserve the whole functionality of the chip. Therefore, precautions must be taken in order to not induce artefacts and let intact its electric performances. In addition, the decapsulation must be fast, making this process even more complex to achieve. Here, I will compare the main decapsulation methods (acid and plasma) and explain how a new method based on microwave induced plasma, fills the criterions for IC decapsulation. I will show that the package can be decapsulated fast at moderate temperature and without fluor based etchants.