|Tues 13:40 – 14:20||Fabian Rudau||In Depth Logic Analysis on Digital Designs|
Physical failure analysis (physical FA) for automotive devices requires an efficient FA workflow to satisfy the customer’s expectations of on-time-delivery and success rate. Field return complaints typically contain only one single failing device. Hence, every step in fault isolation and physical preparation requires a high confidence level in order to avoid the risk of losing the failure in subsequent destructive steps. We will present a software to support the FA engineer to quickly identify correct and incorrect logic signals in digital circuits enabling fast and successful FA.
|Tues 14:20 – 14:40||Pascal Gounet||Compatibility of PFIB delayering and nanoprobing for advanced technologies|
As part of the deployment of nanoprobing capabilities within the company, we have validated various deprocessing methodologies, as well as the following nanoprobing capabilities. This validation has been performed for analog, digital, old and new technologies. This includes technologies that are very sensitive to deprocessing and SEM imaging conditions. In this presentation, the data provided will mainly concern the latter technologies (SOI, FinFET) & FIB deprocessing.
|Tues 14:40 – 15:00||Christian Hollerith||Industrial Standards for Integrated Workflows within FA4.0|
In EU-funding project FA4.0, the idea of Integrated Workflows within FA has been defined and is being developed. Integrated Workflows in FA means that sample remains on the same sample holder in a whole workflow and data, especially position data of regions of interest, is being transported from tool to tool to simplify the workflows for the user as well as increase efficiency. To enable these workflows on tools of different vendors, exchange formats for data as well as a common universal sample holder has to be defined which is established also as industrial standard. This presentation will show examples, the current status of the work and also of the standardization process in cooperation with SEMI.
|Tues 15:00 – 15:20||Dustin Kendig||Thermal and Failure Analysis of Advanced Sub-Micron Devices|
Gaining a thorough understanding of device thermal behavior under operating and static conditions has traditionally been complex, time consuming, and many times, lacked the resolution required to detect thermal anomalies that could lead to early device failures. Additionally, the recently passed CHIPS Act can also be expected to put increased requirements for efficient thermal analysis and testing. Fortunately, advances in thermal imaging techniques that combine the benefits of thermoreflectance-based analysis with illumination wavelengths from near-ultraviolet to near infrared coupled with infrared thermography can support thermal, spatial, and transient resolution consistent with today’s advanced complex device structures and shrinking geometries. In addition, the equipment has advanced to considerably reduce the time and cost to get accurate results. Many examples will be shared in the presentation to fully illustrate the device thermal behaviors that can be detected with these advanced thermal analysis techniques.
|Tues 15:20 – 15:40||Miriam Unger||Novel Submicron Spatial Resolution Infrared Microspectroscopy|
Failure analysis of organics at the microscopic scale is an increasingly important requirement, with traditional analytical tools such as FTIR and Raman microscopy, having significant limitations in either spatial resolution or data quality. We introduce here a new method of obtaining Infrared microspectroscopic information, at the submicron level in reflection, non-contact mode, called Optical-Photothermal Infrared (O-PTIR) spectroscopy, that can also generate simultaneous Raman spectra, from the same spot, at the same time and with the same spatial resolution. In recent developments, we have added a third modality, Fluorescence imaging to help increase image contrast to better highlight defects to then “guide” the subsequent submicron IR spectroscopic measurement. This novel combination of these three correlative techniques can be considered to be complimentary and confirmatory, in which the IR confirms the Raman result and vice-versa, to yield more accurate and therefore more confident organic unknowns analysis by using commercial FTIR/Raman spectral libraries.
|Tues 15:40 – 16:00||Rik Otte||Physical Failure Analysis using Aberration-Corrected S/TEM|
The past two decades have witnessed a rapid increase in the use of aberration-corrected (Scanning-) Transmission Electron Microscope (S/TEM) systems, from fundamental research and materials science labs to adoption into Failure Analysis (FA) labs. Approximately one year after the installation of a double-corrected, monochromated microscope. Our FA lab takes stock of the requirements of users and customers in relation to the capabilities of this high-end system. To elaborate on this, use-cases will be shared containing analyses that benefit from the optimization of depth-of-field in STEM mode and reducing beam damage during Energy Dispersive X-ray (EDX) spectroscopy at different acceleration voltages and beam currents.