|Wed 08:00 – 08:40||Manuel Gaertner||SiC Power Devices: A Key Enabler for the Future E-Mobility|
Wide Bandgap Materials are the perfect candidates for more efficient power electronic applications. Silicon Carbide (SiC) components have been used for many years in the industrial segment and now are progressively entering the automotive field. The first devices have been SiC diodes being used in on board charger PFC stages due to their excellent switching behavior. In the next wave now SiC MOSFETs are strongly entering the automotive domain in different applications like traction inverters, on board chargers and DCDC converters. Compared to well established Si components wide-bandgap materials are characterized by significant advantages especially considering a total cost of ownership approach, one key benefit is the strongly increased efficiency. New innovative power packages, optimized for fast switching and better thermal management, are introduced to the market to exploit the full capabilities of the new semiconductor material. Finally, an outlook on future automotive trends that are enabled by the SiC Technology is given, for example the increased DC bus voltage of nominal 800V that is a key enabler for future e-mobility.
|Wed 08:40 – 09:00||Francesco Iannuzzo||SiC Power MOSFETs Package-Level Testing and Issues in Normal-and Abnormal-Conditions|
The speech presents first the degradation indicators under both wear and short-circuit conditions. Afterwards, an original mixed power-cycling/short-circuit test approach is presented, to investigate the implications of short-circuit events on the expected life. Results of failure analysis (lock-in thermography, focused ion beam, and scanning electron microscope) are also presented along with a transient thermo-mechanical simulation based on finite-element analysis. Finally, a mitigation strategy to enhance short-circuit robustness is proposed.
|Wed 09:00 – 09:20||Giovanni De Nuzzo||Condition Monitoring of SiC Power Modules to Support Predictive Maintenance|
|Wed 09:20 – 09:40||Maximilian Podsednik||Quantitative Aluminum Depth-Profile Measurements in SiC using Laser Assisted Methods|
|Wed 09:40 – 10:00||Bianca Boettge||Material Characterization of Cement Based Encapsulation|
|Wed 10:00 – 10:20||Christophe Fery||Front Side Interconnection with Die Top System for Improved Reliability and High Temperature Performance|
The adoption of SiC dies seems to be a suitable answer with demonstrated improvement of efficiency at system level, higher power densities and the ability to operate at higher temperatures.
However, the technologies for die assembly and interconnect need to match the enhanced performances. The use of Ag sintering, already established for die attach, also offers solutions for front side interconnect especially since Heraeus Electronics introduced the Die Top System (DTS®), which is a thin copper plate with pre-applied sinter paste.This materials system enables the bonding of thick copper wires, thus profiting further from the flexibility and maturity of wedge bonding. DTS® helps to maximize the power density and the reliability.
In the first part of the presentation, DTS® assembly process will be reviewed. Then, power cycling results will be discussed for DTS® either attached to Si-IGBT or to SiC-MOSFET with junction temperature up to 200°C.