|Thur 11:30 – 11:50
||Soeren Hommel||Quantitative dopant characterization on Si and its potential for wide-bandgap semiconductors|
The investigation of dopant distribution in highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and densities in electronic devices, a calibration method based on the estimated complex impedance is introduced. The validation on differently doped silicon demonstrates that the method is able to simultaneously obtain accumulation and depletion capacitances. This enables the calculation of a 2D dopant type profile which simultaneously depicts the dopant density.
|Thur 11:50 – 12:10
||Sylvia Lewis||Novel non-destructive x-ray characterization methods for sub-angstrom dopant and thin film thickness measurements and for chemical state analysis of materials|
Here we present a novel non-destructive chemical thickness and concentration mapping system, with the ability to spatially resolve thin films at <20 microns and in situ, for instance under high temperature and mechanical strain. The Sigray AttoMap microXRF system has sub-Angstrom sensitivities, which has enabled it to map thickness variations of coatings and on the order of angstroms with high repeatability and accuracy. We will present recent trace-level results of thin films with ~1% repeatability, such as Ar, Hf, Ni and Ti measurements and standard-less ratios for fast and non-destructive characterization.
|Thur 12:10 – 12:30
||High Speed Thermal Characterization of GaN Transistors Using State of the Art InSb Detector and Time Equivalent Sampling Approach|
Thermal characterization of microelectronics devices is a critical topic to understand high power device reliability, such as SiC and GaN devices. One of the limitation of current approaches is the limited temporal resolution that can be achieve during such characterization. In this presentation we will present a new method based on equivalent sampling method using a high sensitivity/high resolution InSb camera, demonstrating down to 10µs temporal resolution.
|Thur 12:30 – 12:50
||Juan Atkinson Mora
||3D X-ray microscopy for high-resolution measurements in semiconductor package development|
Due to the increasing complexity of emerging 3D packages, the packaging industry faces challenges for finding effective inspection and metrology techniques. 3D X-ray metrology offers a potential solution through a non-destructive workflow at submicron resolution. The 3D X-ray microscopic (XRM) imaging technique has become integrated in the electronics package failure analysis workflow because it enables the acquisition of rich volumetric information on buried defects not available by cross section. We present XRM sample measurements and a workflow that is applied for multiple repetitive parts for high repeatability and reproducibility. Other 3D metrics may be developed with this metrology workflow.
|Thur 12:50 – 13:10
||Roland Brunner||Analysis of Ag sinter layer porosity by XCT deep learning analysis|
Moore´s law leads to enhanced device performance but also triggers challenges with respect to the materials in use. To keep the trend going, it is necessary to introduce new material concepts, e.g. porous materials. Especially for the production, the characterization of key parameters like the porosity, pore size distribution etc. is significantly important. In this paper, we present (1) 3D nm-FIB-tomography results on porous copper and (2) possibilities for image analysis offering reliable material characterization. The goal is to provide proper feedback to the production, enabling an improved understanding of the manufacturing parameters as well as design.
|Thur 13:10 – 13:30
||Stefan Döring||Standardized and Automated Tracking of Equipment Utilization|
The efficient use of laboratory equipment requires knowledge of its utilization. It is a key performance indicator for the analysis laboratory and adds useful information to assess the labs productivity.
However, often equipment utilization is only estimated based on indirect indicators like the source lifetime (e.g. FIB or SEM) or equipment booking data. Other more direct approaches like processing of detailed equipment generated log file data are very individual solutions and cannot be easily applied to the whole equipment park.
In this work an easy to implement and very generic approach to access equipment utilization is presented. The data is obtained, collected, processed and visualized automatically and almost in real time with no additional effort from the equipment operator or data observer.