Abstracts by Session

Session G: Advanced Failure Analysis Techniques II
Wed  15:40 – 16:00 Simon Cannonier Measure, Heat & Repeat – Development of a High Resolution Metrology Tool for Thermal Warpage Measurement in Failure Analysis and Beyond

In times of increasingly powerful and at the same time smaller electronic devices in everyday lives and environments, the need for highly accurate measurements has continuously increased over the last decades. However, to fully understand the behavior of the progressively complex structures and materials in today\’s devices, it is necessary to measure over the complete temperature range that occurs during the process and the entire life cycle of the product.

Current solutions to this problem are reaching their limits. Therefore, a consortium of several European companies and institutes has decided to develop a new, high-resolution measurement system for thermal warpage measurement as part of the European project FA4.0.

In this session you will get a comprehensive insight into the newly developed tool for failure analysis as well as for the production environment. Learn more about its capabilities with a resolution of up to nanometers using multiple sensor technologies like confocal white light or interferometry in one system. But also about the challenges, experiments and different approaches during the development process on the way to the first prototype.

Wed  16:00 – 16:20 Grigore Moldovan High-resolution EBIC with STEM: developments and applications

Electron Beam Induced Current (EBIC) techniques are essential for localisation of internal electric fields at junctions and defects because they provide live and intuitive images of electrical activity in devices. This ease-of-use matches that of Scanning Electron Microscopes (SEM), therefore EBIC SEM has become the main approach for Electrical Failure Analysis (EFA). However, spatial resolution of EBIC SEM is limited by the diffusion length of minority carriers, which can often be in µm-range, and by the SEM resolution limit, which is typically in the nm-range. Even higher resolution requires Scanning Transmission Electron Microscopes (STEM), which enable acquisition of images with interatomic resolution for Physical Failure Analysis (PFA). As novel technologies shrink, EBIC is poised to expand from SEM to STEM, thus also facilitating a more direct link between EFA and PFA.

This contribution presents the latest developments in EBIC STEM, including experimental aspects of sample preparation and connections with biasing holders, electrical effects of surface damage, reduction of effective diffusion length, as well as example applications to nano-devices and nano-structures.

Wed   16:20 – 16:40 Libor Strakos Single platform workflows for physical failure analysis for Power, Logic & Memory

Failure analysis of semiconductor devices is often complex, requiring multiple standalone instruments to achieve a holistic characterization of the failure. . For example, a common workflow is  site-specific   TEM sample preparation  for site-specific failure analysis. This  requires a combination of unique equipment for failure localization,, sample preparation and data acquisition. Such organization of work on a laboratory level creates challenges with equipment footprint and multiple operator coordination for material and data handling.

In this contribution, we will show integration of all key workflow pieces within state-of-the-art FIB-SEM platform can improve effectivity and practicality of operation with respect to the traditional approaches. Key components of such platform are various means how to localize and mark defects, 5-axis bulk stage, nanomanipulator, double tilt compucentric stage for 3mm TEM grids with extensive tilt range, novel in-lens STEM-in-SEM detector with 3Å resolution and direct electron detector for electron diffraction patterns for sample orientation alignment.

Wed  16:40 – 17:00 Manuel Petersmann Correlation of Pore Formation and Microstructural Characteristics by Linking SEM and EBSD Data – Application to the Cu Metallization of Power Devices

Pore formation in metallization films or solders, is an early stage fatigue damage effect under typical reliability testing conditions. As evident from experiments, interfaces such as grain boundaries, are particularly vulnerable in this regard. The reason for this can only be found in a statistical sense from 2D microscopic data. It was found that data sets of both, scanning electron microscopy (SEM) as well as electron backscattered diffraction (EBSD), are needed for a full characterization. SEM to reliably identify pores, and EBSD to correlate the pores to crystallographic features (interface misorientations texture, triple junctions etc.). However, the difficulty in generating this data is that there are several distortions between the SEM images, containing the best visibility of voids, and the EBSD images, containing the crystallographic features. Therefore, to study the regions close to pores, an automated equalization of the distortions has been developed. Several correlations between crystallographic features and identified pores will be discussed for an electrochemically deposited copper metallization typically used in power electronics.